Nexperia BCV61,215
| Hersteller | NexperiaAsian Brands |
| Herst.-Teilenr. | BCV61,215 |
| LCSC-Nr. | C139955 |
| Verp. | SOT-143 |
| Kundennummer | |
| Hauptmerkm. | 30V 110@2mA,5V 250mW +150℃@(Tj) 100mA 100MHz 200mV@100mA,5mA 2 NPN SOT-143 Special Purpose Transistors RoHS |
| Datenblatt | Nexperia BCV61,215 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Special Purpose Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 110@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Special Purpose Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 110@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Typ | Beschreibung | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
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Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 1,415
1,415 Ab Lager, sofort versandfertig
Nicht für Neuentwicklungen empfohlen
Nach Abverkauf wird dieser Artikel als „Nicht verfügbar“ gekennzeichnet.
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.133 | $ 0.67 |
| 50+ | $ 0.1089 | $ 5.45 |
| 150+ | $ 0.0969 | $ 14.54 |
| 500+ | $ 0.0878 | $ 43.90 |
| 3,000+ | $ 0.0806 | $ 241.80 |
| 6,000+ | $ 0.077 | $ 462.00 |
Standardgehäuse3000/Full Reel | ||
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Special Purpose Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 110@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Special Purpose Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 110@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Typ | Beschreibung | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



