Nexperia BCV61A,215
| Fabricant | NexperiaAsian Brands |
| Réf. Fab. | BCV61A,215 |
| Réf. LCSC | C431629 |
| Condit. | SOT-143 |
| Numéro Client | |
| Caract. clés | 30V 110@2mA,5V 250mW +150℃@(Tj) 100mA 100MHz 200mV@100mA,5mA 2 NPN SOT-143 Special Purpose Transistors RoHS |
| Fiche Technique | Nexperia BCV61A,215 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricant | Nexperia | |
| Condit. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 110@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricant | Nexperia | |
| Condit. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 110@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Type | Description | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
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En stock: 100
100 En stock, expédition immédiate
Minimum: 5Multiple: 5Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 5+ | $ 0.1228 | $ 0.61 |
| 50+ | $ 0.1012 | $ 5.06 |
| 150+ | $ 0.0903 | $ 13.55 |
| 500+ | $ 0.0822 | $ 41.10 |
| 3,000+ | $ 0.0757 | $ 227.10 |
| 6,000+ | $ 0.0724 | $ 434.40 |
| 9,000+ | $ 0.0716 | $ 644.40 |
| 21,000+ | $ 0.0711 | $ 1493.10 |
Boîtier Standard3000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricant | Nexperia | |
| Condit. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 110@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricant | Nexperia | |
| Condit. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 110@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Type | Description | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
Aide & CommentairesAfficher les produits similaires (0) >
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Détails |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



