onsemi MMBT6427LT1G
| Producent | onsemiAsian Brands |
| Nr części prod. | MMBT6427LT1G |
| Nr LCSC | C274695 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | 225mW -55℃~+150℃@(Tj) 20000@5V,100mA 1.5V@500mA,500uA 1uA SOT-23 Single Bipolar Transistors RoHS |
| Karta Katalogowa | onsemi MMBT6427LT1G |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SOT-23 | |
| Power Dissipation (Pd) | 225mW | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| DC current gain (hFE@Vce,Ic) | 20000@5V,100mA | |
| Transition Frequency (fT) | - | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.5V@500mA,500uA | |
| Collector cut-off current (Icbo@Vcb) | 1uA |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SOT-23 | |
| Power Dissipation (Pd) | 225mW | |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Typ | Opis | |
|---|---|---|
| DC current gain (hFE@Vce,Ic) | 20000@5V,100mA | |
| Transition Frequency (fT) | - | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.5V@500mA,500uA | |
| Collector cut-off current (Icbo@Vcb) | 1uA |
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Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 120
120 W magazynie, wysyłka natychmiastowa
Minimum: 10Wielokrotność: 10Jednostka sprzedaży: Piece
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| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 10+ | $ 0.054 | $ 0.54 |
| 100+ | $ 0.0445 | $ 4.45 |
| 300+ | $ 0.0398 | $ 11.94 |
| 3,000+ | $ 0.0329 | $ 98.70 |
| 6,000+ | $ 0.0301 | $ 180.60 |
| 9,000+ | $ 0.0287 | $ 258.30 |
| 21,000+ | $ 0.0283 | $ 594.30 |
| 39,000+ | $ 0.0281 | $ 1095.90 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SOT-23 | |
| Power Dissipation (Pd) | 225mW | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| DC current gain (hFE@Vce,Ic) | 20000@5V,100mA | |
| Transition Frequency (fT) | - | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.5V@500mA,500uA | |
| Collector cut-off current (Icbo@Vcb) | 1uA |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SOT-23 | |
| Power Dissipation (Pd) | 225mW | |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Typ | Opis | |
|---|---|---|
| DC current gain (hFE@Vce,Ic) | 20000@5V,100mA | |
| Transition Frequency (fT) | - | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.5V@500mA,500uA | |
| Collector cut-off current (Icbo@Vcb) | 1uA |
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Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Szczegóły |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |



