onsemi FGA25N120ANTDTU
| Producent | onsemiAsian Brands |
| Nr części prod. | FGA25N120ANTDTU |
| Nr LCSC | C462124 |
| Opak. | TO-3P |
| Numer Klienta | |
| Klucz. cechy | 312W -55℃~+150℃@(Tj) 50A 1.2kV 90A 0.96mJ 4.1mJ TO-3P Single IGBTs RoHS |
| Karta Katalogowa | onsemi FGA25N120ANTDTU |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-3P | |
| Power Dissipation (Pd) | 312W | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector Current (Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | - | |
| Diode Reverse Recovery Time (Trr) | 350ns | |
| Pulsed Collector Current (Icm) | 90A | |
| Turn?off Switching Loss (Eoff) | 0.96mJ | |
| Turn?on Switching Loss (Eon) | 4.1mJ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-3P | |
| Power Dissipation (Pd) | 312W | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector Current (Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Typ | Opis | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | - | |
| Diode Reverse Recovery Time (Trr) | 350ns | |
| Pulsed Collector Current (Icm) | 90A | |
| Turn?off Switching Loss (Eoff) | 0.96mJ | |
| Turn?on Switching Loss (Eon) | 4.1mJ |
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Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 100
100 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.4729 | $ 1.47 |
| 10+ | $ 1.2547 | $ 12.55 |
| 90+ | $ 1.1363 | $ 102.27 |
| 120+ | $ 1.0007 | $ 120.08 |
| 510+ | $ 0.9415 | $ 480.17 |
| 1,200+ | $ 0.9134 | $ 1096.08 |
Standardowa Obudowa30/Full Tube | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-3P | |
| Power Dissipation (Pd) | 312W | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector Current (Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | - | |
| Diode Reverse Recovery Time (Trr) | 350ns | |
| Pulsed Collector Current (Icm) | 90A | |
| Turn?off Switching Loss (Eoff) | 0.96mJ | |
| Turn?on Switching Loss (Eon) | 4.1mJ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-3P | |
| Power Dissipation (Pd) | 312W | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector Current (Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Typ | Opis | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | - | |
| Diode Reverse Recovery Time (Trr) | 350ns | |
| Pulsed Collector Current (Icm) | 90A | |
| Turn?off Switching Loss (Eoff) | 0.96mJ | |
| Turn?on Switching Loss (Eon) | 4.1mJ |
Pomoc i opiniePokaż podobne produkty (0) >
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



