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Infineon BCV 61B E6327
| Fabricant | InfineonAsian Brands |
| Réf. Fab. | BCV 61B E6327 |
| Réf. LCSC | C533925 |
| Condit. | SOT-143-4 |
| Numéro Client | |
| Caract. clés | 30V 290@2mA,5V 300mW +150℃@(Tj) 100mA 250MHz 200mV@100mA,5mA 2 NPN SOT-143-4 Special Purpose Transistors |
| Fiche Technique | Infineon BCV 61B E6327 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricant | Infineon | |
| Condit. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 290@2mA,5V | |
| Power Dissipation (Pd) | 300mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 250MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricant | Infineon | |
| Condit. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 290@2mA,5V | |
| Power Dissipation (Pd) | 300mW |
| Type | Description | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 250MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
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En stock: 100
100 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 0.2072 | $ 0.21 |
| 200+ | $ 0.0802 | $ 16.04 |
| 500+ | $ 0.0774 | $ 38.70 |
| 1,000+ | $ 0.076 | $ 76.00 |
Boîtier Standard3000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricant | Infineon | |
| Condit. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 290@2mA,5V | |
| Power Dissipation (Pd) | 300mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 250MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricant | Infineon | |
| Condit. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 290@2mA,5V | |
| Power Dissipation (Pd) | 300mW |
| Type | Description | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 250MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
Aide & CommentairesAfficher les produits similaires (0) >
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Détails |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Détails |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |