IDCHIP ULN2003

Fabricant	IDCHIPAsian Brands
Réf. Fab.	ULN2003
Réf. LCSC	C688859
Condit.	SOIC-16
Numéro Client
Caract. clés	-20℃~+85℃ 50uA@50V 3V@2V,300mA 1.7V@350mA 65uA@50V,500uA 50uA@50V 1.2V@500uA,350mA 15pF SOIC-16 Bipolar Transistor Arrays
Fiche Technique	IDCHIP ULN2003

Spécifications du Produit

Tout

Type	Description
Catégorie	Discrete Semiconductors/Bipolar (BJT)/Bipolar Transistor Arrays
Fabricant	IDCHIP
Condit.	SOIC-16
Operating Temperature	-20℃~+85℃
Clamp Diode Leakage Current (IR@VR)	50uA@50V
ON-state input voltage(VI(on)@Vce,Ic)	3V@2V,300mA
Clamp Diode Forward Voltage (VF@IF)	1.7V@350mA
Input current (Ii@Vi)	-
Off-state input current (Ii(off)@Vce,Ic)	65uA@50V,500uA
Output leakage current (Icex@Vce)	50uA@50V
Collector-emitter saturation voltage (VCE(sat)@Ii,Ic)	1.2V@500uA,350mA
Input Capacitance (Ci)	15pF

Type	Description
Catégorie	Discrete Semiconductors/Bipolar (BJT)/Bipolar Transistor Arrays
Fabricant	IDCHIP
Condit.	SOIC-16
Operating Temperature	-20℃~+85℃
Clamp Diode Leakage Current (IR@VR)	50uA@50V
ON-state input voltage(VI(on)@Vce,Ic)	3V@2V,300mA

Type	Description
Clamp Diode Forward Voltage (VF@IF)	1.7V@350mA
Input current (Ii@Vi)	-
Off-state input current (Ii(off)@Vce,Ic)	65uA@50V,500uA
Output leakage current (Icex@Vce)	50uA@50V
Collector-emitter saturation voltage (VCE(sat)@Ii,Ic)	1.2V@500uA,350mA
Input Capacitance (Ci)	15pF

Garantie sur chaque commande

100% Authentique · Retour ou échange sous 30 Jours

Rupture de stock

M'avertir

Minimum: 5Multiple: 5Unité de vente: Piece

Ajouter à la Liste BOM

Qté	Prix unit.(Référence uniquement)	Montant total
5+	$ 0.1116	$ 0.56
50+	$ 0.0903	$ 4.52
150+	$ 0.0796	$ 11.94
500+	$ 0.0716	$ 35.80
2,500+	$ 0.0635	$ 158.75
5,000+	$ 0.0603	$ 301.50
Boîtier Standard2500/Full Reel

Meilleur prix pour une plus grande quantité ?

$

Tout

Type	Description
Catégorie	Discrete Semiconductors/Bipolar (BJT)/Bipolar Transistor Arrays
Fabricant	IDCHIP
Condit.	SOIC-16
Operating Temperature	-20℃~+85℃
Clamp Diode Leakage Current (IR@VR)	50uA@50V
ON-state input voltage(VI(on)@Vce,Ic)	3V@2V,300mA
Clamp Diode Forward Voltage (VF@IF)	1.7V@350mA
Input current (Ii@Vi)	-
Off-state input current (Ii(off)@Vce,Ic)	65uA@50V,500uA
Output leakage current (Icex@Vce)	50uA@50V
Collector-emitter saturation voltage (VCE(sat)@Ii,Ic)	1.2V@500uA,350mA
Input Capacitance (Ci)	15pF

Type	Description
Catégorie	Discrete Semiconductors/Bipolar (BJT)/Bipolar Transistor Arrays
Fabricant	IDCHIP
Condit.	SOIC-16
Operating Temperature	-20℃~+85℃
Clamp Diode Leakage Current (IR@VR)	50uA@50V
ON-state input voltage(VI(on)@Vce,Ic)	3V@2V,300mA

Type	Description
Clamp Diode Forward Voltage (VF@IF)	1.7V@350mA
Input current (Ii@Vi)	-
Off-state input current (Ii(off)@Vce,Ic)	65uA@50V,500uA
Output leakage current (Icex@Vce)	50uA@50V
Collector-emitter saturation voltage (VCE(sat)@Ii,Ic)	1.2V@500uA,350mA
Input Capacitance (Ci)	15pF