onsemi NGTB25N120FL3WG
| Producent | onsemiAsian Brands |
| Nr części prod. | NGTB25N120FL3WG |
| Nr LCSC | C94822 |
| Opak. | TO-247-3 |
| Numer Klienta | |
| Klucz. cechy | 349W -55℃~+175℃@(Tj) 100A 1.2kV Trench Field Stop 100A 0.7mJ 1mJ TO-247-3 Single IGBTs RoHS |
| Karta Katalogowa | onsemi NGTB25N120FL3WG |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Power Dissipation (Pd) | 349W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 114ns | |
| Pulsed Collector Current (Icm) | 100A | |
| Turn?off Switching Loss (Eoff) | 0.7mJ | |
| Turn?on Switching Loss (Eon) | 1mJ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Power Dissipation (Pd) | 349W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Typ | Opis | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 114ns | |
| Pulsed Collector Current (Icm) | 100A | |
| Turn?off Switching Loss (Eoff) | 0.7mJ | |
| Turn?on Switching Loss (Eon) | 1mJ |
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Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 100
100 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 2.9349 | $ 2.93 |
| 10+ | $ 2.5687 | $ 25.69 |
| 30+ | $ 2.3395 | $ 70.19 |
| 100+ | $ 2.1042 | $ 210.42 |
| 500+ | $ 1.9966 | $ 998.30 |
| 1,000+ | $ 1.9514 | $ 1951.40 |
Standardowa Obudowa30/Full Tube | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Power Dissipation (Pd) | 349W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 114ns | |
| Pulsed Collector Current (Icm) | 100A | |
| Turn?off Switching Loss (Eoff) | 0.7mJ | |
| Turn?on Switching Loss (Eon) | 1mJ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Power Dissipation (Pd) | 349W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Typ | Opis | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 114ns | |
| Pulsed Collector Current (Icm) | 100A | |
| Turn?off Switching Loss (Eoff) | 0.7mJ | |
| Turn?on Switching Loss (Eon) | 1mJ |
Pomoc i opiniePokaż podobne produkty (0) >
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



