Nexperia BCV61B,235
| Producent | NexperiaAsian Brands |
| Nr części prod. | BCV61B,235 |
| Nr LCSC | C549616 |
| Opak. | SOT-143-4 |
| Numer Klienta | |
| Klucz. cechy | 30V 200@2mA,5V 250mW +150℃@(Tj) 100mA 100MHz 200mV@100mA,5mA 2 NPN SOT-143-4 Special Purpose Transistors |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Special Purpose Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Special Purpose Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Typ | Opis | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
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Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 100
100 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.1154 | $ 0.12 |
| 200+ | $ 0.0447 | $ 8.94 |
| 500+ | $ 0.0431 | $ 21.55 |
| 1,000+ | $ 0.0424 | $ 42.40 |
Standardowa Obudowa10000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Special Purpose Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Special Purpose Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Typ | Opis | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA | |
| Transistor Type | 2 NPN |
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Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

