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GigaDevice Semicon Beijing GD5F2GQ5UEYIGR
| Fabricant | GigaDevice Semicon BeijingAsian Brands |
| Réf. Fab. | GD5F2GQ5UEYIGR |
| Réf. LCSC | C2880463 |
| Condit. | DFN-8-EP(6x8) |
| Numéro Client | |
| Caract. clés | -40℃~85℃ 50uA 30mA 30mA 30mA 3ms 300us 3.3V 104MHz 2Gbit DFN-8-EP(6x8) NAND FLASH |
| Fiche Technique | GigaDevice Semicon Beijing GD5F2GQ5UEYIGR |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Integrated Circuits (ICs)/Memory/NAND FLASH | |
| Fabricant | GigaDevice Semicon Beijing | |
| Condit. | DFN-8-EP(6x8) | |
| Operating Temperature | -40℃~85℃ | |
| Standby supply current | 50uA | |
| Supply Current (Erase) | 30mA | |
| Supply Current (Program) | 30mA | |
| Supply Current (Read) | 30mA | |
| Block Erase Time (tBE) | 3ms | |
| Page Program time (Tprog) | 300us | |
| Write Cycle Time (tWC) | - | |
| Supply Voltage | 3.3V | |
| Clock Frequency (fc) | 104MHz | |
| Memory Size | 2Gbit |
| Type | Description | |
|---|---|---|
| Catégorie | Integrated Circuits (ICs)/Memory/NAND FLASH | |
| Fabricant | GigaDevice Semicon Beijing | |
| Condit. | DFN-8-EP(6x8) | |
| Operating Temperature | -40℃~85℃ | |
| Standby supply current | 50uA | |
| Supply Current (Erase) | 30mA | |
| Supply Current (Program) | 30mA |
| Type | Description | |
|---|---|---|
| Supply Current (Read) | 30mA | |
| Block Erase Time (tBE) | 3ms | |
| Page Program time (Tprog) | 300us | |
| Write Cycle Time (tWC) | - | |
| Supply Voltage | 3.3V | |
| Clock Frequency (fc) | 104MHz | |
| Memory Size | 2Gbit |
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 2.4563 | $ 2.46 |
| 10+ | $ 2.0635 | $ 20.64 |
| 30+ | $ 2.0015 | $ 60.05 |
| 100+ | $ 1.9085 | $ 190.85 |
Boîtier Standard3000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Integrated Circuits (ICs)/Memory/NAND FLASH | |
| Fabricant | GigaDevice Semicon Beijing | |
| Condit. | DFN-8-EP(6x8) | |
| Operating Temperature | -40℃~85℃ | |
| Standby supply current | 50uA | |
| Supply Current (Erase) | 30mA | |
| Supply Current (Program) | 30mA | |
| Supply Current (Read) | 30mA | |
| Block Erase Time (tBE) | 3ms | |
| Page Program time (Tprog) | 300us | |
| Write Cycle Time (tWC) | - | |
| Supply Voltage | 3.3V | |
| Clock Frequency (fc) | 104MHz | |
| Memory Size | 2Gbit |
| Type | Description | |
|---|---|---|
| Catégorie | Integrated Circuits (ICs)/Memory/NAND FLASH | |
| Fabricant | GigaDevice Semicon Beijing | |
| Condit. | DFN-8-EP(6x8) | |
| Operating Temperature | -40℃~85℃ | |
| Standby supply current | 50uA | |
| Supply Current (Erase) | 30mA | |
| Supply Current (Program) | 30mA |
| Type | Description | |
|---|---|---|
| Supply Current (Read) | 30mA | |
| Block Erase Time (tBE) | 3ms | |
| Page Program time (Tprog) | 300us | |
| Write Cycle Time (tWC) | - | |
| Supply Voltage | 3.3V | |
| Clock Frequency (fc) | 104MHz | |
| Memory Size | 2Gbit |
Aide & CommentairesAfficher les produits similaires (0) >
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Détails |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Détails |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |