HUAYI HY1001D

Producent	HUAYIAsian Brands
Nr części prod.	HY1001D
Nr LCSC	C2983279
Opak.	TO-252-2
Numer Klienta
Klucz. cechy	70V 75W -55℃~+175℃@(Tj) 70A 7.4mΩ@10V,40A 3V@250uA 220pF@25V N Channel 4.2nF@25V 82nC@10V TO-252-2 Single FETs, MOSFETs
Karta Katalogowa	HUAYI HY1001D

Specyfikacje Produktu

Wszystko

Typ	Opis
Kategoria	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Producent	HUAYI
Opak.	TO-252-2
Drain Source Voltage (Vdss)	70V
Power Dissipation (Pd)	75W
Operating Temperature	-55℃~+175℃@(Tj)
Continuous Drain Current (Id)	70A
Drain Source On Resistance (RDS(on)@Vgs,Id)	7.4mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)@Id)	3V@250uA
Reverse Transfer Capacitance (Crss@Vds)	220pF@25V
Type	N Channel
Input Capacitance (Ciss@Vds)	4.2nF@25V
Total Gate Charge (Qg@Vgs)	82nC@10V

Typ	Opis
Kategoria	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Producent	HUAYI
Opak.	TO-252-2
Drain Source Voltage (Vdss)	70V
Power Dissipation (Pd)	75W
Operating Temperature	-55℃~+175℃@(Tj)
Continuous Drain Current (Id)	70A

Typ	Opis
Drain Source On Resistance (RDS(on)@Vgs,Id)	7.4mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)@Id)	3V@250uA
Reverse Transfer Capacitance (Crss@Vds)	220pF@25V
Type	N Channel
Input Capacitance (Ciss@Vds)	4.2nF@25V
Total Gate Charge (Qg@Vgs)	82nC@10V

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100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni

Na stanie: 158

158 W magazynie, wysyłka natychmiastowa

Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece

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Szt.	Cena jedn.	Suma całkowita
1+	$ 0.3363	$ 0.34
6+	$ 0.2739	$ 1.64
50+	$ 0.2471	$ 12.36
200+	$ 0.2137	$ 42.74
500+	$ 0.1988	$ 99.40
1,600+	$ 0.1899	$ 303.84
2,500+	$ 0.1877	$ 469.25
5,000+	$ 0.1862	$ 931.00
Standardowa Obudowa2500/Full Reel

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Wszystko

Typ	Opis
Kategoria	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Producent	HUAYI
Opak.	TO-252-2
Drain Source Voltage (Vdss)	70V
Power Dissipation (Pd)	75W
Operating Temperature	-55℃~+175℃@(Tj)
Continuous Drain Current (Id)	70A
Drain Source On Resistance (RDS(on)@Vgs,Id)	7.4mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)@Id)	3V@250uA
Reverse Transfer Capacitance (Crss@Vds)	220pF@25V
Type	N Channel
Input Capacitance (Ciss@Vds)	4.2nF@25V
Total Gate Charge (Qg@Vgs)	82nC@10V

Typ	Opis
Kategoria	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Producent	HUAYI
Opak.	TO-252-2
Drain Source Voltage (Vdss)	70V
Power Dissipation (Pd)	75W
Operating Temperature	-55℃~+175℃@(Tj)
Continuous Drain Current (Id)	70A

Typ	Opis
Drain Source On Resistance (RDS(on)@Vgs,Id)	7.4mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)@Id)	3V@250uA
Reverse Transfer Capacitance (Crss@Vds)	220pF@25V
Type	N Channel
Input Capacitance (Ciss@Vds)	4.2nF@25V
Total Gate Charge (Qg@Vgs)	82nC@10V