Guangdong Hottech 4953

Producent	Guangdong HottechAsian Brands
Nr części prod.	4953
Nr LCSC	C717603
Opak.	SO-8
Numer Klienta
Klucz. cechy	2W 30V -55℃~+150℃@(Tj) 4.9A 48mΩ@10V,5.1A 1.6V@250uA 70pF@15V 2 P-Channel 520pF@15V 12nC@10V SO-8 Single FETs, MOSFETs
Karta Katalogowa	Guangdong Hottech 4953

Specyfikacje Produktu

Wszystko

Typ	Opis
Kategoria	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Producent	Guangdong Hottech
Opak.	SO-8
Power Dissipation (Pd)	2W
Drain Source Voltage (Vdss)	30V
Operating Temperature	-55℃~+150℃@(Tj)
Continuous Drain Current (Id)	4.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)	48mΩ@10V,5.1A
Gate Threshold Voltage (Vgs(th)@Id)	1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)	70pF@15V
Type	2 P-Channel
Input Capacitance (Ciss@Vds)	520pF@15V
Total Gate Charge (Qg@Vgs)	12nC@10V

Typ	Opis
Kategoria	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Producent	Guangdong Hottech
Opak.	SO-8
Power Dissipation (Pd)	2W
Drain Source Voltage (Vdss)	30V
Operating Temperature	-55℃~+150℃@(Tj)
Continuous Drain Current (Id)	4.9A

Typ	Opis
Drain Source On Resistance (RDS(on)@Vgs,Id)	48mΩ@10V,5.1A
Gate Threshold Voltage (Vgs(th)@Id)	1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)	70pF@15V
Type	2 P-Channel
Input Capacitance (Ciss@Vds)	520pF@15V
Total Gate Charge (Qg@Vgs)	12nC@10V

Na stanie: 22,925

22,925 W magazynie, wysyłka natychmiastowa

Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece

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Szt.	Cena jedn.	Suma całkowita
5+	$ 0.0936	$ 0.47
50+	$ 0.0769	$ 3.85
150+	$ 0.0685	$ 10.28
500+	$ 0.0622	$ 31.10
3,000+	$ 0.0534	$ 160.20
6,000+	$ 0.0509	$ 305.40
Standardowa Obudowa3000/Full Reel

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Wszystko

Typ	Opis
Kategoria	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Producent	Guangdong Hottech
Opak.	SO-8
Power Dissipation (Pd)	2W
Drain Source Voltage (Vdss)	30V
Operating Temperature	-55℃~+150℃@(Tj)
Continuous Drain Current (Id)	4.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)	48mΩ@10V,5.1A
Gate Threshold Voltage (Vgs(th)@Id)	1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)	70pF@15V
Type	2 P-Channel
Input Capacitance (Ciss@Vds)	520pF@15V
Total Gate Charge (Qg@Vgs)	12nC@10V

Typ	Opis
Kategoria	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Producent	Guangdong Hottech
Opak.	SO-8
Power Dissipation (Pd)	2W
Drain Source Voltage (Vdss)	30V
Operating Temperature	-55℃~+150℃@(Tj)
Continuous Drain Current (Id)	4.9A

Typ	Opis
Drain Source On Resistance (RDS(on)@Vgs,Id)	48mΩ@10V,5.1A
Gate Threshold Voltage (Vgs(th)@Id)	1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)	70pF@15V
Type	2 P-Channel
Input Capacitance (Ciss@Vds)	520pF@15V
Total Gate Charge (Qg@Vgs)	12nC@10V