onsemi FGH50T65SQD-F155
| Producent | onsemiAsian Brands |
| Nr części prod. | FGH50T65SQD-F155 |
| Nr LCSC | C132704 |
| Opak. | TO-247-3 |
| Numer Klienta | |
| Klucz. cechy | 268W -55℃~+175℃@(Tj) 100A 650V Trench Field Stop 200A 0.045mJ 0.18mJ TO-247-3 Single IGBTs RoHS |
| Karta Katalogowa | onsemi FGH50T65SQD-F155 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Power Dissipation (Pd) | 268W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 31ns | |
| Pulsed Collector Current (Icm) | 200A | |
| Turn?off Switching Loss (Eoff) | 0.045mJ | |
| Turn?on Switching Loss (Eon) | 0.18mJ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Power Dissipation (Pd) | 268W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Typ | Opis | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 31ns | |
| Pulsed Collector Current (Icm) | 200A | |
| Turn?off Switching Loss (Eoff) | 0.045mJ | |
| Turn?on Switching Loss (Eon) | 0.18mJ |
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Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 100
100 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 3.1417 | $ 3.14 |
| 10+ | $ 2.8343 | $ 28.34 |
| 30+ | $ 2.6423 | $ 79.27 |
| 100+ | $ 2.4444 | $ 244.44 |
| 500+ | $ 2.3559 | $ 1177.95 |
| 1,000+ | $ 2.2794 | $ 2279.40 |
| 2,000+ | $ 2.2989 | $ 4597.80 |
| 4,000+ | $ 2.2869 | $ 9147.60 |
Standardowa Obudowa30/Full Tube | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Power Dissipation (Pd) | 268W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 31ns | |
| Pulsed Collector Current (Icm) | 200A | |
| Turn?off Switching Loss (Eoff) | 0.045mJ | |
| Turn?on Switching Loss (Eon) | 0.18mJ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Producent | onsemi | |
| Opak. | TO-247-3 | |
| Power Dissipation (Pd) | 268W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Typ | Opis | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 31ns | |
| Pulsed Collector Current (Icm) | 200A | |
| Turn?off Switching Loss (Eoff) | 0.045mJ | |
| Turn?on Switching Loss (Eon) | 0.18mJ |
Pomoc i opiniePokaż podobne produkty (0) >
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



