onsemi HGTG11N120CND

Manufacturer	onsemiAsian Brands
MPN	HGTG11N120CND
LCSC Part #	C11755
Packaging	TO-247AC-3
Customer #
Key Attributes	298W -55℃~+150℃@(Tj) 43A 1.2kV NPT 80A 1.3mJ 0.95mJ TO-247AC-3 Single IGBTs RoHS
Datasheet	onsemi HGTG11N120CND

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/IGBTs/Single IGBTs
Manufacturer	onsemi
Packaging	TO-247AC-3
Power Dissipation (Pd)	298W
Operating Temperature	-55℃~+150℃@(Tj)
Collector Current (Ic)	43A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Input Capacitance (Cies@Vce)	-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Type	NPT
Diode Reverse Recovery Time (Trr)	70ns
Pulsed Collector Current (Icm)	80A
Turn?off Switching Loss (Eoff)	1.3mJ
Turn?on Switching Loss (Eon)	0.95mJ

In-Stock: 8

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Qty	Unit Price	Total Amount
1+	$ 5.4062	$ 5.41
10+	$ 4.8284	$ 48.28
30+	$ 4.4772	$ 134.32
90+	$ 4.1815	$ 376.34
450+	$ 4.1365	$ 1861.43
Standard Packaging30/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/IGBTs/Single IGBTs
Manufacturer	onsemi
Packaging	TO-247AC-3
Power Dissipation (Pd)	298W
Operating Temperature	-55℃~+150℃@(Tj)
Collector Current (Ic)	43A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Input Capacitance (Cies@Vce)	-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Type	NPT
Diode Reverse Recovery Time (Trr)	70ns
Pulsed Collector Current (Icm)	80A
Turn?off Switching Loss (Eoff)	1.3mJ
Turn?on Switching Loss (Eon)	0.95mJ