onsemi FGH50T65SQD-F155

Manufacturer	onsemiAsian Brands
MPN	FGH50T65SQD-F155
LCSC Part #	C132704
Packaging	TO-247-3
Customer #
Key Attributes	268W -55℃~+175℃@(Tj) 100A 650V Trench Field Stop 200A 0.045mJ 0.18mJ TO-247-3 Single IGBTs RoHS
Datasheet	onsemi FGH50T65SQD-F155

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/IGBTs/Single IGBTs
Manufacturer	onsemi
Packaging	TO-247-3
Power Dissipation (Pd)	268W
Operating Temperature	-55℃~+175℃@(Tj)
Collector Current (Ic)	100A
Collector-Emitter Breakdown Voltage (Vces)	650V
Input Capacitance (Cies@Vce)	-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Type	Trench Field Stop
Diode Reverse Recovery Time (Trr)	31ns
Pulsed Collector Current (Icm)	200A
Turn?off Switching Loss (Eoff)	0.045mJ
Turn?on Switching Loss (Eon)	0.18mJ

In-Stock: 100

100 In stock, ships now

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Qty	Unit Price	Total Amount
1+	$ 3.1417	$ 3.14
10+	$ 2.8343	$ 28.34
30+	$ 2.6423	$ 79.27
100+	$ 2.4444	$ 244.44
500+	$ 2.3559	$ 1177.95
1,000+	$ 2.2794	$ 2279.40
2,000+	$ 2.2989	$ 4597.80
4,000+	$ 2.2869	$ 9147.60
Standard Packaging30/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/IGBTs/Single IGBTs
Manufacturer	onsemi
Packaging	TO-247-3
Power Dissipation (Pd)	268W
Operating Temperature	-55℃~+175℃@(Tj)
Collector Current (Ic)	100A
Collector-Emitter Breakdown Voltage (Vces)	650V
Input Capacitance (Cies@Vce)	-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Type	Trench Field Stop
Diode Reverse Recovery Time (Trr)	31ns
Pulsed Collector Current (Icm)	200A
Turn?off Switching Loss (Eoff)	0.045mJ
Turn?on Switching Loss (Eon)	0.18mJ