onsemi MMBT6427LT1G

Manufacturer	onsemiAsian Brands
MPN	MMBT6427LT1G
LCSC Part #	C274695
Packaging	SOT-23
Customer #
Key Attributes	225mW -55℃~+150℃@(Tj) 20000@5V,100mA 1.5V@500mA,500uA 1uA SOT-23 Single Bipolar Transistors RoHS
Datasheet	onsemi MMBT6427LT1G

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Bipolar (BJT)/Single Bipolar Transistors
Manufacturer	onsemi
Packaging	SOT-23
Power Dissipation (Pd)	225mW
Operating Temperature	-55℃~+150℃@(Tj)
DC current gain (hFE@Vce,Ic)	20000@5V,100mA
Transition Frequency (fT)	-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	1.5V@500mA,500uA
Collector cut-off current (Icbo@Vcb)	1uA

In-Stock: 120

120 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
10+	$ 0.054	$ 0.54
100+	$ 0.0445	$ 4.45
300+	$ 0.0398	$ 11.94
3,000+	$ 0.0329	$ 98.70
6,000+	$ 0.0301	$ 180.60
9,000+	$ 0.0287	$ 258.30
21,000+	$ 0.0283	$ 594.30
39,000+	$ 0.0281	$ 1095.90
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Bipolar (BJT)/Single Bipolar Transistors
Manufacturer	onsemi
Packaging	SOT-23
Power Dissipation (Pd)	225mW
Operating Temperature	-55℃~+150℃@(Tj)
DC current gain (hFE@Vce,Ic)	20000@5V,100mA
Transition Frequency (fT)	-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	1.5V@500mA,500uA
Collector cut-off current (Icbo@Vcb)	1uA