VBsemi Elec VBE2309

Manufacturer	VBsemi ElecAsian Brands
MPN	VBE2309
LCSC Part #	C416261
Packaging	TO-252-2
Customer #
Key Attributes	30V 187W 80A 13mΩ@10V,30A 3V@250uA P Channel TO-252-2 Single FETs, MOSFETs RoHS
Datasheet	VBsemi Elec VBE2309

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	VBsemi Elec
Packaging	TO-252-2
Drain Source Voltage (Vdss)	30V
Power Dissipation (Pd)	187W
Continuous Drain Current (Id)	80A
Drain Source On Resistance (RDS(on)@Vgs,Id)	13mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)	3V@250uA
Type	P Channel

In-Stock: 2,117

2,117 In stock, ships now

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Qty	Unit Price	Total Amount
1+	$ 0.7344	$ 0.73
10+	$ 0.613	$ 6.13
30+	$ 0.5538	$ 16.61
100+	$ 0.4932	$ 49.32
500+	$ 0.4097	$ 204.85
1,000+	$ 0.3915	$ 391.50
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	VBsemi Elec
Packaging	TO-252-2
Drain Source Voltage (Vdss)	30V
Power Dissipation (Pd)	187W
Continuous Drain Current (Id)	80A
Drain Source On Resistance (RDS(on)@Vgs,Id)	13mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)	3V@250uA
Type	P Channel