onsemi FGA25N120ANTDTU

Manufacturer	onsemiAsian Brands
MPN	FGA25N120ANTDTU
LCSC Part #	C462124
Packaging	TO-3P
Customer #
Key Attributes	312W -55℃~+150℃@(Tj) 50A 1.2kV 90A 0.96mJ 4.1mJ TO-3P Single IGBTs RoHS
Datasheet	onsemi FGA25N120ANTDTU

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/IGBTs/Single IGBTs
Manufacturer	onsemi
Packaging	TO-3P
Power Dissipation (Pd)	312W
Operating Temperature	-55℃~+150℃@(Tj)
Collector Current (Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Input Capacitance (Cies@Vce)	-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Type	-
Diode Reverse Recovery Time (Trr)	350ns
Pulsed Collector Current (Icm)	90A
Turn?off Switching Loss (Eoff)	0.96mJ
Turn?on Switching Loss (Eon)	4.1mJ

In-Stock: 100

100 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 1.4729	$ 1.47
10+	$ 1.2547	$ 12.55
90+	$ 1.1363	$ 102.27
120+	$ 1.0007	$ 120.08
510+	$ 0.9415	$ 480.17
1,200+	$ 0.9134	$ 1096.08
Standard Packaging30/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/IGBTs/Single IGBTs
Manufacturer	onsemi
Packaging	TO-3P
Power Dissipation (Pd)	312W
Operating Temperature	-55℃~+150℃@(Tj)
Collector Current (Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Input Capacitance (Cies@Vce)	-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Type	-
Diode Reverse Recovery Time (Trr)	350ns
Pulsed Collector Current (Icm)	90A
Turn?off Switching Loss (Eoff)	0.96mJ
Turn?on Switching Loss (Eon)	4.1mJ