HXY MOSFET SI2310-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | SI2310-HXY |
| LCSC Part # | C4748716 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 1.7W 60V 3A 86mΩ@10V,3A 2V@250uA N Channel 510pF@30V SOT-23 Single FETs, MOSFETs |
| Datasheet | HXY MOSFET SI2310-HXY |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Power Dissipation (Pd) | 1.7W | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 86mΩ@10V,3A | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Type | N Channel | |
| Input Capacitance (Ciss@Vds) | 510pF@30V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Power Dissipation (Pd) | 1.7W | |
| Drain Source Voltage (Vdss) | 60V |
| Type | Description | |
|---|---|---|
| Continuous Drain Current (Id) | 3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 86mΩ@10V,3A | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Type | N Channel | |
| Input Capacitance (Ciss@Vds) | 510pF@30V |
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Minimum: 10Multiple: 10Sales Unit: Piece
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 10+ | $ 0.05 | $ 0.50 |
| 100+ | $ 0.0408 | $ 4.08 |
| 300+ | $ 0.0363 | $ 10.89 |
| 3,000+ | $ 0.0315 | $ 94.50 |
| 6,000+ | $ 0.0288 | $ 172.80 |
| 9,000+ | $ 0.0274 | $ 246.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Power Dissipation (Pd) | 1.7W | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 86mΩ@10V,3A | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Type | N Channel | |
| Input Capacitance (Ciss@Vds) | 510pF@30V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Power Dissipation (Pd) | 1.7W | |
| Drain Source Voltage (Vdss) | 60V |
| Type | Description | |
|---|---|---|
| Continuous Drain Current (Id) | 3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 86mΩ@10V,3A | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Type | N Channel | |
| Input Capacitance (Ciss@Vds) | 510pF@30V |
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Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



