onsemi HGTG11N120CND
| Fabricante | onsemiAsian Brands |
| N.º de pieza fab. | HGTG11N120CND |
| Nº LCSC | C11755 |
| Emb. | TO-247AC-3 |
| Número de Cliente | |
| Atrib. clave | 298W -55℃~+150℃@(Tj) 43A 1.2kV NPT 80A 1.3mJ 0.95mJ TO-247AC-3 Single IGBTs |
| Hoja de Datos | onsemi HGTG11N120CND |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Fabricante | onsemi | |
| Emb. | TO-247AC-3 | |
| Power Dissipation (Pd) | 298W | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector Current (Ic) | 43A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | NPT | |
| Diode Reverse Recovery Time (Trr) | 70ns | |
| Pulsed Collector Current (Icm) | 80A | |
| Turn?off Switching Loss (Eoff) | 1.3mJ | |
| Turn?on Switching Loss (Eon) | 0.95mJ |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Fabricante | onsemi | |
| Emb. | TO-247AC-3 | |
| Power Dissipation (Pd) | 298W | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector Current (Ic) | 43A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Tipo | Descripción | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | NPT | |
| Diode Reverse Recovery Time (Trr) | 70ns | |
| Pulsed Collector Current (Icm) | 80A | |
| Turn?off Switching Loss (Eoff) | 1.3mJ | |
| Turn?on Switching Loss (Eon) | 0.95mJ |
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Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 8
8 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 5.4062 | $ 5.41 |
| 10+ | $ 4.8284 | $ 48.28 |
| 30+ | $ 4.4772 | $ 134.32 |
| 90+ | $ 4.1815 | $ 376.34 |
| 450+ | $ 4.1365 | $ 1861.43 |
Encapsulado Estándar30/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Fabricante | onsemi | |
| Emb. | TO-247AC-3 | |
| Power Dissipation (Pd) | 298W | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector Current (Ic) | 43A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | NPT | |
| Diode Reverse Recovery Time (Trr) | 70ns | |
| Pulsed Collector Current (Icm) | 80A | |
| Turn?off Switching Loss (Eoff) | 1.3mJ | |
| Turn?on Switching Loss (Eon) | 0.95mJ |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Fabricante | onsemi | |
| Emb. | TO-247AC-3 | |
| Power Dissipation (Pd) | 298W | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector Current (Ic) | 43A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Tipo | Descripción | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | NPT | |
| Diode Reverse Recovery Time (Trr) | 70ns | |
| Pulsed Collector Current (Icm) | 80A | |
| Turn?off Switching Loss (Eoff) | 1.3mJ | |
| Turn?on Switching Loss (Eon) | 0.95mJ |
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Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |


