IDCHIP ULN2003

Fabricante	IDCHIPAsian Brands
N.º de pieza fab.	ULN2003
Nº LCSC	C688859
Emb.	SOIC-16
Número de Cliente
Atrib. clave	-20℃~+85℃ 50uA@50V 3V@2V,300mA 1.7V@350mA 65uA@50V,500uA 50uA@50V 1.2V@500uA,350mA 15pF SOIC-16 Bipolar Transistor Arrays
Hoja de Datos	IDCHIP ULN2003

Especificaciones del Producto

Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Bipolar (BJT)/Bipolar Transistor Arrays
Fabricante	IDCHIP
Emb.	SOIC-16
Operating Temperature	-20℃~+85℃
Clamp Diode Leakage Current (IR@VR)	50uA@50V
ON-state input voltage(VI(on)@Vce,Ic)	3V@2V,300mA
Clamp Diode Forward Voltage (VF@IF)	1.7V@350mA
Input current (Ii@Vi)	-
Off-state input current (Ii(off)@Vce,Ic)	65uA@50V,500uA
Output leakage current (Icex@Vce)	50uA@50V
Collector-emitter saturation voltage (VCE(sat)@Ii,Ic)	1.2V@500uA,350mA
Input Capacitance (Ci)	15pF

Tipo	Descripción
Categoría	Discrete Semiconductors/Bipolar (BJT)/Bipolar Transistor Arrays
Fabricante	IDCHIP
Emb.	SOIC-16
Operating Temperature	-20℃~+85℃
Clamp Diode Leakage Current (IR@VR)	50uA@50V
ON-state input voltage(VI(on)@Vce,Ic)	3V@2V,300mA

Tipo	Descripción
Clamp Diode Forward Voltage (VF@IF)	1.7V@350mA
Input current (Ii@Vi)	-
Off-state input current (Ii(off)@Vce,Ic)	65uA@50V,500uA
Output leakage current (Icex@Vce)	50uA@50V
Collector-emitter saturation voltage (VCE(sat)@Ii,Ic)	1.2V@500uA,350mA
Input Capacitance (Ci)	15pF

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Cant.	Prec. unit.(Solo como referencia)	Importo total
5+	$ 0.1116	$ 0.56
50+	$ 0.0903	$ 4.52
150+	$ 0.0796	$ 11.94
500+	$ 0.0716	$ 35.80
2,500+	$ 0.0635	$ 158.75
5,000+	$ 0.0603	$ 301.50
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Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Bipolar (BJT)/Bipolar Transistor Arrays
Fabricante	IDCHIP
Emb.	SOIC-16
Operating Temperature	-20℃~+85℃
Clamp Diode Leakage Current (IR@VR)	50uA@50V
ON-state input voltage(VI(on)@Vce,Ic)	3V@2V,300mA
Clamp Diode Forward Voltage (VF@IF)	1.7V@350mA
Input current (Ii@Vi)	-
Off-state input current (Ii(off)@Vce,Ic)	65uA@50V,500uA
Output leakage current (Icex@Vce)	50uA@50V
Collector-emitter saturation voltage (VCE(sat)@Ii,Ic)	1.2V@500uA,350mA
Input Capacitance (Ci)	15pF

Tipo	Descripción
Categoría	Discrete Semiconductors/Bipolar (BJT)/Bipolar Transistor Arrays
Fabricante	IDCHIP
Emb.	SOIC-16
Operating Temperature	-20℃~+85℃
Clamp Diode Leakage Current (IR@VR)	50uA@50V
ON-state input voltage(VI(on)@Vce,Ic)	3V@2V,300mA

Tipo	Descripción
Clamp Diode Forward Voltage (VF@IF)	1.7V@350mA
Input current (Ii@Vi)	-
Off-state input current (Ii(off)@Vce,Ic)	65uA@50V,500uA
Output leakage current (Icex@Vce)	50uA@50V
Collector-emitter saturation voltage (VCE(sat)@Ii,Ic)	1.2V@500uA,350mA
Input Capacitance (Ci)	15pF