onsemi NGTB25N120FL3WG
| Fabricante | onsemiAsian Brands |
| N.º de pieza fab. | NGTB25N120FL3WG |
| Nº LCSC | C94822 |
| Emb. | TO-247-3 |
| Número de Cliente | |
| Atrib. clave | 349W -55℃~+175℃@(Tj) 100A 1.2kV Trench Field Stop 100A 0.7mJ 1mJ TO-247-3 Single IGBTs RoHS |
| Hoja de Datos | onsemi NGTB25N120FL3WG |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Fabricante | onsemi | |
| Emb. | TO-247-3 | |
| Power Dissipation (Pd) | 349W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 114ns | |
| Pulsed Collector Current (Icm) | 100A | |
| Turn?off Switching Loss (Eoff) | 0.7mJ | |
| Turn?on Switching Loss (Eon) | 1mJ |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Fabricante | onsemi | |
| Emb. | TO-247-3 | |
| Power Dissipation (Pd) | 349W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Tipo | Descripción | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 114ns | |
| Pulsed Collector Current (Icm) | 100A | |
| Turn?off Switching Loss (Eoff) | 0.7mJ | |
| Turn?on Switching Loss (Eon) | 1mJ |
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Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 100
100 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 2.9349 | $ 2.93 |
| 10+ | $ 2.5687 | $ 25.69 |
| 30+ | $ 2.3395 | $ 70.19 |
| 100+ | $ 2.1042 | $ 210.42 |
| 500+ | $ 1.9966 | $ 998.30 |
| 1,000+ | $ 1.9514 | $ 1951.40 |
Encapsulado Estándar30/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Fabricante | onsemi | |
| Emb. | TO-247-3 | |
| Power Dissipation (Pd) | 349W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 114ns | |
| Pulsed Collector Current (Icm) | 100A | |
| Turn?off Switching Loss (Eoff) | 0.7mJ | |
| Turn?on Switching Loss (Eon) | 1mJ |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/IGBTs/Single IGBTs | |
| Fabricante | onsemi | |
| Emb. | TO-247-3 | |
| Power Dissipation (Pd) | 349W | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector Current (Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Tipo | Descripción | |
|---|---|---|
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Type | Trench Field Stop | |
| Diode Reverse Recovery Time (Trr) | 114ns | |
| Pulsed Collector Current (Icm) | 100A | |
| Turn?off Switching Loss (Eoff) | 0.7mJ | |
| Turn?on Switching Loss (Eon) | 1mJ |
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Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



