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Modelos EDAEasyEDA
Nexperia BCV62B,235
| Fabricante | NexperiaAsian Brands |
| N.º de pieza fab. | BCV62B,235 |
| Nº LCSC | C549619 |
| Emb. | SOT-143-4 |
| Número de Cliente | |
| Atrib. clave | 30V 220@2mA,5V 250mW +150℃@(Tj) 100mA 100MHz 250mV@100mA,5mA 2PCSPNP SOT-143-4 Special Purpose Transistors |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricante | Nexperia | |
| Emb. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 220@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA,5mA | |
| Transistor Type | 2PCSPNP |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricante | Nexperia | |
| Emb. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 220@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Tipo | Descripción | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA,5mA | |
| Transistor Type | 2PCSPNP |
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Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 100
100 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 0.2037 | $ 0.20 |
| 200+ | $ 0.0789 | $ 15.78 |
| 500+ | $ 0.0761 | $ 38.05 |
| 1,000+ | $ 0.0747 | $ 74.70 |
Encapsulado Estándar10000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricante | Nexperia | |
| Emb. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 220@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA,5mA | |
| Transistor Type | 2PCSPNP |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricante | Nexperia | |
| Emb. | SOT-143-4 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 220@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Tipo | Descripción | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA,5mA | |
| Transistor Type | 2PCSPNP |
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Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |