Nexperia BCV62,215
| Fabricante | NexperiaAsian Brands |
| N.º de pieza fab. | BCV62,215 |
| Nº LCSC | C139953 |
| Emb. | SOT-143 |
| Número de Cliente | |
| Atrib. clave | 30V 100@2mA,5V 250mW +150℃@(Tj) 100mA 100MHz 250mV@100mA,5mA 2PCSPNP SOT-143 Special Purpose Transistors RoHS |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricante | Nexperia | |
| Emb. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 100@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA,5mA | |
| Transistor Type | 2PCSPNP |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricante | Nexperia | |
| Emb. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 100@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Tipo | Descripción | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA,5mA | |
| Transistor Type | 2PCSPNP |
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Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 500
500 En stock, envío inmediato
No recomendado para nuevos diseños
Una vez agotadas las existencias, este producto pasará a "No disponible".
Avisarme
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 5+ | $ 0.1472 | $ 0.74 |
| 50+ | $ 0.1206 | $ 6.03 |
| 150+ | $ 0.1092 | $ 16.38 |
| 500+ | $ 0.095 | $ 47.50 |
| 2,500+ | $ 0.0887 | $ 221.75 |
| 5,000+ | $ 0.0849 | $ 424.50 |
Encapsulado Estándar3000/Full Reel | ||
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricante | Nexperia | |
| Emb. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 100@2mA,5V | |
| Power Dissipation (Pd) | 250mW | |
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA,5mA | |
| Transistor Type | 2PCSPNP |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Special Purpose Transistors | |
| Fabricante | Nexperia | |
| Emb. | SOT-143 | |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V | |
| DC Current Gain (hFE@Ic,Vce) | 100@2mA,5V | |
| Power Dissipation (Pd) | 250mW |
| Tipo | Descripción | |
|---|---|---|
| Operating Temperature | +150℃@(Tj) | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 100MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA,5mA | |
| Transistor Type | 2PCSPNP |
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Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



